Buffered oxide etch (7:1) VLSI for microelectronic use, J.T.Baker®
|
Danger
|
5361-03EA
0
KRW
5361-03
Buffered oxide etch (7:1) VLSI for microelectronic use, J.T.Baker®
Buffered oxide etch
|
UN:
2922 ADR: 8,II |
사양 테스트 결과
| For Microelectronic Use | |
| Ship and store material above 55°F (13°C) | |
| Ammonium Fluoride (NH₄F)(w/w) | 34.3 - 35.3 % |
| Hydrofluoric Acid (HF)(w/w) | 6.18 - 6.48 % |
| Residue after Ignition | ≤10 ppm |
| Trace Impurities - Aluminum (Al) | ≤200.0 ppb |
| Arsenic and Antimony (as As) | ≤30.0 ppb |
| Trace Impurities - Barium (Ba) | ≤1000.0 ppb |
| Trace Impurities - Boron (B) | ≤200.0 ppb |
| Trace Impurities - Cadmium (Cd) | ≤500.0 ppb |
| Trace Impurities - Calcium (Ca) | ≤200.0 ppb |
| Trace Impurities - Chromium (Cr) | ≤100.0 ppb |
| Trace Impurities - Cobalt (Co) | ≤500.0 ppb |
| Trace Impurities - Copper (Cu) | ≤100.0 ppb |
| Trace Impurities - Gallium (Ga) | ≤500.0 ppb |
| Trace Impurities - Germanium (Ge) | ≤500.0 ppb |
| Trace Impurities - Gold (Au) | ≤300.0 ppb |
| Heavy Metals (as Pb) | ≤1000.0 ppb |
| Trace Impurities - Iron (Fe) | ≤200.0 ppb |
| Trace Impurities - Lead (Pb) | ≤300.0 ppb |
| Trace Impurities - Lithium (Li) | ≤1000.0 ppb |
| Trace Impurities - Magnesium (Mg) | ≤200.0 ppb |
| Trace Impurities - Manganese (Mn) | ≤200.0 ppb |
| Trace Impurities - Nickel (Ni) | ≤200.0 ppb |
| Trace Impurities - Potassium (K) | ≤300.0 ppb |
| Trace Impurities - Silver (Ag) | ≤500.0 ppb |
| Trace Impurities - Sodium (Na) | ≤300 ppb |
| Trace Impurities - Strontium (Sr) | ≤1000.0 ppb |
| Trace Impurities - Tin (Sn) | ≤300.0 ppb |
| Trace Impurities - Titanium (Ti) | ≤300.0 ppb |
| Trace Impurities - Zinc (Zn) | ≤300.0 ppb |
| Particle Count - 1.0 µm and greater | ≤25 par/ml |
| Reported value is the average of all samples counted for this lot number | |
| with no individual sample value exceeding the specification. | |
| For additional information, go to www.askavantor.com. Search keywords | |
| freezing" and product name." |
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